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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5129 DESCRIPTION With TO-3P(H)IS package High speed High voltage Low saturation voltage APPLICATIONS Horizontal deflection output for high resolution display,colorTV High speed switching applications PINNING PIN 1 2 3 Base Collector DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj Tstg PARAMETER TOR NDU ICO E SEM ANG INCH Emitter CONDITIONS VALUE 1500 600 5 10 20 5 TC=25ae 50 150 -55~150 Collector-base voltage Open emitter Collector-emitter voltage Open base Emitter-base voltage Collector current Collector current-Peak Base current Total power dissipation Junction temperature Storage temperature Open collector Fig.1 simplified outline (TO-3P(H)IS) and symbol UNIT V V V A A A W ae ae Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Collector output capacitance Transition frequency CONDITIONS IC=10mA ;IB=0 IC=6A; IB=1.5A IC=6A ;IB=1.5A VCB=1500V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=6A ; VCE=5V IE=0 ; VCB=10V,f=1MHz IC=0.1A ; VCE=10V 10 4 135 MIN 600 TYP. 2SC5129 SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 Cob fT MAX UNIT V 3.0 1.4 1 10 30 8 |I V V mA A pF MHz Switching times (inductive load) ts tf Storage time NDU ICO E SEM ANG INCH Fall time ICP=5A;IB1(end) =1A fH=64kHz TOR 1.7 4.0 0.3 |I |I s s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC5129 TOR NDU ICO E SEM ANG INCH Fig.2 Outline dimensions (unindicated tolerance:A 0.20 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5129 TOR NDU ICO E SEM ANG INCH 4 |
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